The new ML7xx42 distributed feedback laser diode incorporates an AlGaInAs active layer with 10 mW of output power at low current, even under high-temperature conditions. Thanks to improved bandwidth modulation, it can operate smoothly at 10 Gbps. This DFB-LD is supplied in a 4.8 mm diameter TO-CAN package and equipped with an aspherical lens that provides high coupling efficiency.
The ML7xx42 has its peak light emission at a wavelength of 1270 nm, while the output power is 10 mW at operating currents of less than 70 mA. It is designed for an operating temperature range of -5 °C to +75 °C.
Mitsubishi Electric uses AllnAs for the multiplication layer of its new low-noise avalanche photodiode, which delivers an industry-leading sensitivity of 31.5 dBm. Housed in a 5.4 mm TO-CAN package with a ball lens cap, the PD8xx24 operates at a wavelength of 1570 nm and has a typical APD responsiveness of 0.8 A/W, along with a typical bandwidth of 6.5 GHz.
