GaN technology supports RF power densities five to six times greater than gallium arsenide-based RF amplifiers. The proven performance and reliability of GaN technology make it an ideal choice for infrastructure, defense, and aerospace applications such as radar, electronic warfare, communications, navigation, and similar applications. This increased performance capability gives designers the flexibility to reduce board footprint and system costs while improving performance.
Mouser Electronics' QPD GaN RF transistors include the recently released QPD1003, the first internally matched 50-ohm L-band power amplifier. The new QPD1003 meets the performance requirements of high-power phased arrays, such as Active Electronically Scanned Array (AESA) radars, operating in the 1.2 to 1.4 GHz frequency range. These systems require power amplifiers that operate at peak efficiency, resulting in low heat generation under demanding environmental conditions.
