The modules combine RF driver ICs and power MOSFETs in a single high-performance package capable of delivering between 1 and 3 kW of power at frequencies up to 40 MHz. This design guide also provides system developers with RF design techniques related to component selection, matching network design, output power optimization, efficiency maximization, cooling, and packaging, as well as detailed recommendations on the circuit topologies required to build a complete RF generator.
“Our DRF product range offers substantial advantages compared to conventional low-voltage RF systems,” says Glenn Wright, marketing manager for MOSRF products at Microsemi. “These advantages include the ability to address design challenges to reduce size, increase power density, improve reliability, and lower total system cost across a wide range of industrial, scientific, and medical applications.”.
Microsemi's DRF product family combines up to two RF driver ICs, two RF power MOSFETs, and associated decoupling capacitors into a single package. The close proximity between the driver IC and the MOSFET greatly reduces circuit inductance and improves performance compared to other solutions using discrete components, enabling a wide variety of circuit configurations and system topologies. Designed to deliver power in continuous, Class D and E, and pulsed power applications, the modules are capable of supplying up to 3kW of RF power and require only 5V logic-level input signals. They also utilize Microsemi's unique flangeless packaging capability to reduce cost and improve performance compared to other existing solutions.
Microsemi's DRF design guide, as well as other development tools and support offerings, are now available, including SPICE models, reference design kits, and application notes.
